Cobalt silicide and titanium silicide effects on nano devices

• Main Authors: Elgomati H.A., Majlis B.Y., Salehuddin F., Ahmad I., Zaharim A., Hamid F.A.
• Other Authors: 36536722700
• Format: Conference Paper
• Published: 2023
• Subjects: cobalt silicide; nanometer; NMOS; Silicide; titanium silicide; Aluminum; Annealing; Carbon dioxide; CMOS integrated circuits; Cobalt; Cobalt compounds; Electric contactors; Electric properties; Electron mobility; Metals; Ohmic contacts; Polysilicon; Titanium; Titanium nitride; Tungsten; Wire; Aluminum wires; Anneal temperatures; Annealing process; CMOS devices; Cobalt layers; Cobalt salicide; Cobalt silicide; Different effects; Electrical characterization; Fabrication process; Gate structure; Growth process; High resistivity; High temperature; Metal silicide; N2 ambient; Nano device; Non-existence; Polysilicon gates; Salicides; Silicide surfaces; Silicon substrates; Silvaco; Thin tin; Silicides

This paper describes growth process of the two silicide Sub-nanometer devices and the different effects of having cobalt silicide and titanium silicide on a Sub-nanometer CMOS devices. On the top of CMOS device gate, metal silicide is developed on-top of the polysilicon to produce an ohmic contact b...