Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
Buffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potenti...
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2023
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my.uniten.dspace-272802023-05-29T17:42:04Z Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell Sameera J.N. Islam M.A. Islam S. Hossain T. Sobayel M.K. Akhtaruzzaman M. Amin N. Rashid M.J. 57220953272 57220973693 57213340399 36537101800 57194049079 57195441001 7102424614 56754641100 Buffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potential buffer layer; Potential materials; Cadmium telluride Cubic Silicon Carbide (3C�SiC) is a potential material for use in photovoltaics for its significant advancement in growth in terms of crystal quality and domain size. Hence, 3C�SiC has been introduced here as an alternative non-toxic buffer layer for heterojunction CdTe solar cell. The solar cell is designed for the study consisted of multi-junction semiconductor layers such as p-CdTe/n-3C�SiC/n-SnO2. Device modeling of the novel CdTe solar cell including the thickness and doping concentration of the novel buffer layer 3C�SiC are investigated and optimized using SCAPS-1D software. Also, the defect density in the buffer layer is studied to see the tolerance of the proposed device structure. The working temperature and incident light intensity are also varied to deduce the effect of environmental conditions on efficient PV operation. � 2021 Elsevier B.V. Final 2023-05-29T09:42:04Z 2023-05-29T09:42:04Z 2022 Article 10.1016/j.optmat.2021.111911 2-s2.0-85122077543 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85122077543&doi=10.1016%2fj.optmat.2021.111911&partnerID=40&md5=1f9aec82de6a233ccd02be5e4228cb3d https://irepository.uniten.edu.my/handle/123456789/27280 123 111911 Elsevier B.V. Scopus |
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Buffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potential buffer layer; Potential materials; Cadmium telluride |
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57220953272 Sameera J.N. Islam M.A. Islam S. Hossain T. Sobayel M.K. Akhtaruzzaman M. Amin N. Rashid M.J. |
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Article |
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Sameera J.N. Islam M.A. Islam S. Hossain T. Sobayel M.K. Akhtaruzzaman M. Amin N. Rashid M.J. |
| spellingShingle |
Sameera J.N. Islam M.A. Islam S. Hossain T. Sobayel M.K. Akhtaruzzaman M. Amin N. Rashid M.J. Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell |
| author_sort |
Sameera J.N. |
| title |
Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell |
| title_short |
Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell |
| title_full |
Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell |
| title_fullStr |
Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell |
| title_full_unstemmed |
Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell |
| title_sort |
cubic silicon carbide (3c�sic) as a buffer layer for high efficiency and highly stable cdte solar cell |
| publisher |
Elsevier B.V. |
| publishDate |
2023 |
| _version_ |
1806425982173708288 |
| score |
13.18916 |