Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
Buffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potenti...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
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Elsevier B.V.
2023
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| Summary: | Buffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potential buffer layer; Potential materials; Cadmium telluride |
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