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Performance of Ge and In0.53Ga0.47as thermophotovoltaic cells under different spectral irradiances

Antireflection coatings; Cells; Computer software; Efficiency; Energy gap; Gallium alloys; Gallium arsenide; III-V semiconductors; Indium alloys; Open circuit voltage; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Reflective coatings; Semiconducting germanium; Semiconducting...

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Main Authors: Gamel M.M.A., Ker P.J., Rashid W.E.S.W.A., Lee H.J., Hannan M.A., Jamaludin M.Z.B.
Other Authors: 57215306835
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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spelling my.uniten.dspace-265702023-05-29T17:12:09Z Performance of Ge and In0.53Ga0.47as thermophotovoltaic cells under different spectral irradiances Gamel M.M.A. Ker P.J. Rashid W.E.S.W.A. Lee H.J. Hannan M.A. Jamaludin M.Z.B. 57215306835 37461740800 57204586520 57190622221 7103014445 57216839721 Antireflection coatings; Cells; Computer software; Efficiency; Energy gap; Gallium alloys; Gallium arsenide; III-V semiconductors; Indium alloys; Open circuit voltage; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Reflective coatings; Semiconducting germanium; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Average efficiencies; Blackbody temperatures; Illumination intensity; Indium gallium arsenide; Infrared illumination; Performance parameters; Thermophoto voltaic cells; Thermophotovoltaic systems; Cytology The investigation on the effect of illumination power intensities for a thermophotovoltaic (TPV) system is crucial to enhance the TPV cell performance. To date, the studies on the effect of illumination intensities were limited to solar photovoltaic cells application. Meanwhile, the reported work on the impact of infrared illumination intensities on TPV cells are done at limited temperatures and intensities. The effects of TPV intensities on all performance parameters are not comprehensively studied and fully elucidated. Therefore, this paper investigates the performance of indirect-bandgap Germanium (Ge) and direct-bandgap Indium Gallium Arsenide (InGaAs) cells under various TPV spectral irradiances. Silvaco TCAD simulation software was used to investigate the effect of blackbody temperatures ranging from 800 to 2000 K with different illumination intensities on the TPV cell performances. It was found that higher conversion efficiencies are achieved for both TPV cells under higher illumination intensities due to the increase in open-circuit voltage and fill factor. As the beam intensity increases for temperatures >1600 K, fill factor slowly increases for the Ge cell, but decreases for the InGaAs cell due to the increase in the I2Rs losses associated with the high current. The finding demonstrates that the open-circuit voltage of indirect-bandgap TPV cell is significantly increased with higher illumination intensities. The variations in cells performance are explicitly explained based on factors such as TPV design structure and the physical properties of semiconductor at varying illumination intensities. The performance of both TPV cells were also analyzed at the minimum optical losses. Average efficiencies of Ge and InGaAs TPV cells were increased to 26.05% and 27.92%, respectively, when the optical losses were minimized with anti-reflection coating and thicker absorber layer. The results of this work demonstrate that by detailed consideration of the effect of spectral irradiances, a high-performance TPV system can be developed. � 2013 IEEE. Final 2023-05-29T09:12:08Z 2023-05-29T09:12:08Z 2021 Article 10.1109/ACCESS.2021.3062075 2-s2.0-85101738717 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85101738717&doi=10.1109%2fACCESS.2021.3062075&partnerID=40&md5=df31357ba9f191f990a4598788b7dcc2 https://irepository.uniten.edu.my/handle/123456789/26570 9 9363119 37091 37102 All Open Access, Gold Institute of Electrical and Electronics Engineers Inc. Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Antireflection coatings; Cells; Computer software; Efficiency; Energy gap; Gallium alloys; Gallium arsenide; III-V semiconductors; Indium alloys; Open circuit voltage; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Reflective coatings; Semiconducting germanium; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Average efficiencies; Blackbody temperatures; Illumination intensity; Indium gallium arsenide; Infrared illumination; Performance parameters; Thermophoto voltaic cells; Thermophotovoltaic systems; Cytology
author2 57215306835
author_facet 57215306835
Gamel M.M.A.
Ker P.J.
Rashid W.E.S.W.A.
Lee H.J.
Hannan M.A.
Jamaludin M.Z.B.
format Article
author Gamel M.M.A.
Ker P.J.
Rashid W.E.S.W.A.
Lee H.J.
Hannan M.A.
Jamaludin M.Z.B.
spellingShingle Gamel M.M.A.
Ker P.J.
Rashid W.E.S.W.A.
Lee H.J.
Hannan M.A.
Jamaludin M.Z.B.
Performance of Ge and In0.53Ga0.47as thermophotovoltaic cells under different spectral irradiances
author_sort Gamel M.M.A.
title Performance of Ge and In0.53Ga0.47as thermophotovoltaic cells under different spectral irradiances
title_short Performance of Ge and In0.53Ga0.47as thermophotovoltaic cells under different spectral irradiances
title_full Performance of Ge and In0.53Ga0.47as thermophotovoltaic cells under different spectral irradiances
title_fullStr Performance of Ge and In0.53Ga0.47as thermophotovoltaic cells under different spectral irradiances
title_full_unstemmed Performance of Ge and In0.53Ga0.47as thermophotovoltaic cells under different spectral irradiances
title_sort performance of ge and in0.53ga0.47as thermophotovoltaic cells under different spectral irradiances
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2023
_version_ 1806428234853646336
score 13.214268

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