High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique
Aspect ratio; Catalysts; Etching; Hydrofluoric acid; Light; Metals; Photons; Porosity; Silicon solar cells; Silicon wafers; Surface roughness; Textures; Chemical etching technique; High aspect ratio; High aspect ratio microstructures; Metal-assisted chemical etching; Nanowire formation; Roughness pa...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| id |
my.uniten.dspace-26138 |
|---|---|
| record_format |
dspace |
| spelling |
my.uniten.dspace-261382023-05-29T17:07:06Z High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique Razak N.H.A. Amin N. Kiong T.S. Sopian K. Akhtaruzzaman M. 54397656800 7102424614 57216824752 7003375391 57195441001 Aspect ratio; Catalysts; Etching; Hydrofluoric acid; Light; Metals; Photons; Porosity; Silicon solar cells; Silicon wafers; Surface roughness; Textures; Chemical etching technique; High aspect ratio; High aspect ratio microstructures; Metal-assisted chemical etching; Nanowire formation; Roughness parameters; Silicon microstructures; Silicon nano structure (SiNS); Silicon wafer surface; Solar cell and reflectance; Nanowires In this paper, silicon nanowires formation on N-type crystalline silicon wafer is studied. Metal-assisted chemical etching (MACE) technique is used in this study because it's low cost but can produce a high-aspect-ratio of silicon nanowires. High-aspect-ratio silicon nanostructures have been proved as an effective texture for light trapping on silicon solar cells surfaces. The photons from incident light can be trap on the silicon nanowires and then being absorb into the cells which resulting high efficiency silicon solar cells. Traditionally, MACE works by creating a holes using metal catalyst such as Ag or Au in order to reduce of the etchant. The hydrofluoric acid (HF) and hydrogen peroxide (H2O2) are function to etched the metal native oxide thus create a pores or nanowires formation. Roughness parameters of silicon nanowires was investigate in order to see the texture of silicon nanowires is rough enough to trap more photons on silicon wafer surfaces. Hence, roughness parameters are very important for texturing silicon wafer surfaces. In this study, root mean square (RMS) is used as an indicators for which acquired from the line profiles. Results from the roughness parameters shown a good compatibility. � 2021 IEEE. Final 2023-05-29T09:07:06Z 2023-05-29T09:07:06Z 2021 Conference Paper 10.1109/PVSC43889.2021.9518597 2-s2.0-85115975509 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115975509&doi=10.1109%2fPVSC43889.2021.9518597&partnerID=40&md5=678dd0d47b799efc7383f3cafa7d71ed https://irepository.uniten.edu.my/handle/123456789/26138 2596 2599 Institute of Electrical and Electronics Engineers Inc. Scopus |
| institution |
Universiti Tenaga Nasional |
| building |
UNITEN Library |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Tenaga Nasional |
| content_source |
UNITEN Institutional Repository |
| url_provider |
http://dspace.uniten.edu.my/ |
| description |
Aspect ratio; Catalysts; Etching; Hydrofluoric acid; Light; Metals; Photons; Porosity; Silicon solar cells; Silicon wafers; Surface roughness; Textures; Chemical etching technique; High aspect ratio; High aspect ratio microstructures; Metal-assisted chemical etching; Nanowire formation; Roughness parameters; Silicon microstructures; Silicon nano structure (SiNS); Silicon wafer surface; Solar cell and reflectance; Nanowires |
| author2 |
54397656800 |
| author_facet |
54397656800 Razak N.H.A. Amin N. Kiong T.S. Sopian K. Akhtaruzzaman M. |
| format |
Conference Paper |
| author |
Razak N.H.A. Amin N. Kiong T.S. Sopian K. Akhtaruzzaman M. |
| spellingShingle |
Razak N.H.A. Amin N. Kiong T.S. Sopian K. Akhtaruzzaman M. High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique |
| author_sort |
Razak N.H.A. |
| title |
High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_short |
High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_full |
High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_fullStr |
High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_full_unstemmed |
High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_sort |
high-aspect-ratio silicon nanostructures on n-type silicon wafer using metal-assisted chemical etching (mace) technique |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
| _version_ |
1806426397722279936 |
| score |
13.18916 |