Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D

• Main Authors: Chowdhury M.S., Shahahmadi S.A., Chelvanathan P., Tiong S.K., Amin N., Techato K., Nuthammachot N., Chowdhury T., Suklueng M.
• Other Authors: 57224213317
• Format: Note
• Published: Elsevier B.V. 2023

In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at <1014 cm?3 defect density and >400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite's conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance. � 2019 The Authors