Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D
In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. P...
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| Main Authors: | , , , , , , , , |
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| Format: | Note |
| Published: |
Elsevier B.V.
2023
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| Summary: | In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at <1014 cm?3 defect density and >400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite's conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance. � 2019 The Authors |
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