Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
Electron beam lithography; Field effect transistors; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Signal to noise ratio; Silicides; Taguchi methods; Threshold voltage; Titanium dioxide; 22 nm; Compensation implantations; High-k/metal gates; International Techn...
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Institute of Electrical and Electronics Engineers Inc.
2023
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my.uniten.dspace-222042023-05-29T13:59:36Z Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method Maheran A.H.A. Menon P.S. Shaari S. Ahmad I. Faizah Z.A.N. 36570222300 57201289731 6603595092 12792216600 56395444600 Electron beam lithography; Field effect transistors; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Signal to noise ratio; Silicides; Taguchi methods; Threshold voltage; Titanium dioxide; 22 nm; Compensation implantations; High-k/metal gates; International Technology Roadmap for Semiconductors; L9 orthogonal arrays; PMOS; Process parameter variations; Statistical optimization; MOSFET devices This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using Taguchi's Signal-to-noise ratio (SNR) of nominal-the-best (NTB), the compensation implantation has been as identified as the dominant factor influencing the Vth value with 67.77% while the Halo implantation tilting angle has been identified as the adjustment factor. Upon optimization, the Vth value is-0.29538 V which is within the requirements of the International Technology Roadmap for Semiconductors (ITRS) 2012 which is-0.289 V � 12.7 %. � 2015 IEEE. Final 2023-05-29T05:59:36Z 2023-05-29T05:59:36Z 2015 Conference Paper 10.1109/RSM.2015.7354989 2-s2.0-84963795360 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963795360&doi=10.1109%2fRSM.2015.7354989&partnerID=40&md5=8963e6a8da7791fc026e14de4107586e https://irepository.uniten.edu.my/handle/123456789/22204 7354989 Institute of Electrical and Electronics Engineers Inc. Scopus |
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Electron beam lithography; Field effect transistors; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Signal to noise ratio; Silicides; Taguchi methods; Threshold voltage; Titanium dioxide; 22 nm; Compensation implantations; High-k/metal gates; International Technology Roadmap for Semiconductors; L9 orthogonal arrays; PMOS; Process parameter variations; Statistical optimization; MOSFET devices |
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36570222300 |
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36570222300 Maheran A.H.A. Menon P.S. Shaari S. Ahmad I. Faizah Z.A.N. |
| format |
Conference Paper |
| author |
Maheran A.H.A. Menon P.S. Shaari S. Ahmad I. Faizah Z.A.N. |
| spellingShingle |
Maheran A.H.A. Menon P.S. Shaari S. Ahmad I. Faizah Z.A.N. Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method |
| author_sort |
Maheran A.H.A. |
| title |
Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method |
| title_short |
Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method |
| title_full |
Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method |
| title_fullStr |
Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method |
| title_full_unstemmed |
Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method |
| title_sort |
statistical optimization of process parameters for threshold voltage in 22 nm p-type mosfet using taguchi method |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
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1806427722415603712 |
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13.214268 |