Modeling of 14 nm gate length n-Type MOSFET
Dielectric materials; Fabrication; Field effect transistors; Gate dielectrics; Gates (transistor); Hafnium oxides; High-k dielectric; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Threshold voltage; Transistors; ATHENA; ATLAS; High-k/metal gates; Metal gate tra...
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| Main Authors: | , , , , |
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| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
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| Summary: | Dielectric materials; Fabrication; Field effect transistors; Gate dielectrics; Gates (transistor); Hafnium oxides; High-k dielectric; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Threshold voltage; Transistors; ATHENA; ATLAS; High-k/metal gates; Metal gate transistors; MOS-FET; Short-channel effect; Virtual fabrication; Wafer fabrications; MOSFET devices |
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