Influence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOS
This paper presents the influence of control factors as the process in development of 18 nm gate length NMOS transistor. The threshold voltage (VTH) can be minimized by optimal the control factors. Five control factors were selected through experiments. They are Adjustment VTH Implantation, Compensa...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2020
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