Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation
International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.
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Universiti Malaysia Perlis
2010
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my.unimap-90202010-08-23T07:44:23Z Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation Haider F., Abdul Amir Fuei, Pien Chee Optoelectronic X-rays Total Ionizing Dose (TID) Commercial-off-the shelf (COTS) devices under test (DUT) current transfer ratio (CTR) International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia. Nowadays, the space technology is becoming increasingly versatile and important. Most of the important technologies such as weather forecasting, remote sensing, navigation operations, satellite television, and telecommunications systems, as well as surveillance and command-and-control operations for national security purposes critically rely on space infrastructure. Consequently, these kinds of systems are subjected to the deleterious effects of the natural space radiation environment. Furthermore, there is a growing tendency in using commercial-off-the shelf (COTS) optoelectronic devices for replacing dedicated expensive radiation hardened photonics. Expanding photonic system into such environments requires a full understanding of the effects that ionizing radiation will have on the optoelectronic properties. In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation. 2010-08-23T07:44:23Z 2010-08-23T07:44:23Z 2010-06-09 Working Paper p.11-16 978-967-5760-02-0 http://hdl.handle.net/123456789/9020 en Proceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010 Universiti Malaysia Perlis School of Materials Engineering & School of Environmental Engineering |
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Universiti Malaysia Perlis |
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Malaysia |
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Universiti Malaysia Perlis |
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http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Optoelectronic X-rays Total Ionizing Dose (TID) Commercial-off-the shelf (COTS) devices under test (DUT) current transfer ratio (CTR) International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) |
| spellingShingle |
Optoelectronic X-rays Total Ionizing Dose (TID) Commercial-off-the shelf (COTS) devices under test (DUT) current transfer ratio (CTR) International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) Haider F., Abdul Amir Fuei, Pien Chee Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation |
| description |
International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia. |
| format |
Working Paper |
| author |
Haider F., Abdul Amir Fuei, Pien Chee |
| author_facet |
Haider F., Abdul Amir Fuei, Pien Chee |
| author_sort |
Haider F., Abdul Amir |
| title |
Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation |
| title_short |
Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation |
| title_full |
Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation |
| title_fullStr |
Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation |
| title_full_unstemmed |
Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation |
| title_sort |
evaluation of static performance of optoelectronic semiconductor devices under x-rays irradiation |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2010 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/9020 |
| _version_ |
1643789374621483008 |
| score |
13.214268 |