Comments: Virtual fabrication of 14nm gate length n-Type double gate MOSFET

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Bibliographic Details
Main Authors:	Afifah Maheran A. H, N. H. N. M. Nizam, F. Salehuddin, K. E. Kaharudin, Noor Faizah Z. A
Other Authors:	afifah@utem.edu.my
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis (UniMAP) 2023
Subjects:	Bilayer Graphene Double gate-MOSFET High-K/Metal gate
Online Access:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78124
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