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Virtual fabrication of 14nm gate length n-Type double gate MOSFET

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Main Authors: Afifah Maheran A. H, N. H. N. M. Nizam, F. Salehuddin, K. E. Kaharudin, Noor Faizah Z. A
Other Authors: afifah@utem.edu.my
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2023
Subjects:
Bilayer Graphene
Double gate-MOSFET
High-K/Metal gate
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78124
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spelling my.unimap-781242023-03-10T07:01:05Z Virtual fabrication of 14nm gate length n-Type double gate MOSFET Afifah Maheran A. H N. H. N. M. Nizam F. Salehuddin K. E. Kaharudin Noor Faizah Z. A afifah@utem.edu.my MiNE, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Lincoln University College Main Campus, Wisma Lincoln, No. 12, 14, 16 & 18, Jalan SS 6/12, 47301 Petaling Jaya, Selangor Darul Ehsan, Faculty of Architecture and Engineering Limkokwing University Inovasi 1-1, Jalan Teknokrat 1/1 63000 Cyberjaya, Selangor Bilayer Graphene Double gate-MOSFET High-K/Metal gate Link to publisher's homepage at http://ijneam.unimap.edu.my/ Due to Moore's law, it is that predicted the channel length of a metal-oxide-semiconductor Field Effect Transistor (MOSFET) will tend to shrink from the submicron to the nanoscale size. Thus, precision in the manufacturing process has become crucial. This study describes the virtual fabrication as well as the electrical characteristics of a 14nm NMOS double gate with a bilayer graphene/high-K/metal gate. In this device, Hafnium Dioxide (HfO2) is employed as a high-k material, and Tungsten Silicide (WSix) is used as a metal gate. Several Silvaco TCAD Tools, including ATHENA and ATLAS, were utilized in the fabrication and simulation of the device, respectively. According to the simulation results, the optimal threshold voltage (VTH), drive current (ION), and leakage current (IOFF) and subthreshold slope (SS) values are 0.2059 V, 797.5650 μA/μm. 29.5794 nA/μm, and 89.1712x10-3 V respectively. The findings of this research showed that the efficiency of this 14nm double gate n-type MOSFET device is satisfactory because the threshold voltage and leakage current parameters are in accordance with ITRS 2013, and that it may have been utilized as a utility man in future modelling and optimization efforts. 2023-03-10T07:01:05Z 2023-03-10T07:01:05Z 2023-01 Article International Journal of Nanoelectronics and Materials, vol.16(1), 2023, pages 43-51 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78124 en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Bilayer Graphene
Double gate-MOSFET
High-K/Metal gate
spellingShingle Bilayer Graphene
Double gate-MOSFET
High-K/Metal gate
Afifah Maheran A. H
N. H. N. M. Nizam
F. Salehuddin
K. E. Kaharudin
Noor Faizah Z. A
Virtual fabrication of 14nm gate length n-Type double gate MOSFET
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 afifah@utem.edu.my
author_facet afifah@utem.edu.my
Afifah Maheran A. H
N. H. N. M. Nizam
F. Salehuddin
K. E. Kaharudin
Noor Faizah Z. A
format Article
author Afifah Maheran A. H
N. H. N. M. Nizam
F. Salehuddin
K. E. Kaharudin
Noor Faizah Z. A
author_sort Afifah Maheran A. H
title Virtual fabrication of 14nm gate length n-Type double gate MOSFET
title_short Virtual fabrication of 14nm gate length n-Type double gate MOSFET
title_full Virtual fabrication of 14nm gate length n-Type double gate MOSFET
title_fullStr Virtual fabrication of 14nm gate length n-Type double gate MOSFET
title_full_unstemmed Virtual fabrication of 14nm gate length n-Type double gate MOSFET
title_sort virtual fabrication of 14nm gate length n-type double gate mosfet
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2023
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78124
_version_ 1772813134282620928
score 13.160551

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