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Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate

Link to publisher's homepage at http://ijneam.unimap.edu.my

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Bibliographic Details
Main Authors: A. H. Afifah Maheran, Izwanizam, Yahaya, F., Salehuddin, K. E., Kaharudin
Other Authors: afifah@utem.edu.my
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
Subjects:
Graphene
Design
Silvaco
n-type
MOSFET
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76250
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spelling my.unimap-762502022-09-28T08:04:22Z Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate A. H. Afifah Maheran Izwanizam, Yahaya F., Salehuddin K. E., Kaharudin afifah@utem.edu.my Micro & Nano Electronics Research Group (MiNE), Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Malaysia Graphene Design Silvaco n-type MOSFET Link to publisher's homepage at http://ijneam.unimap.edu.my This paper will discuss the virtual fabrication design process of a 22nm MOSFET bilayer graphene with high-ĸ metal gate (HKMG). Silvaco software's TCAD fabrication tools were utilized, with the Athena simulation module used to construct the device design and the Atlas module used to describe the device's electrical characteristics. To get the electrical characterization of a transistor specified by international standards, fixed field scaling methods were employed. Advanced and new methods were used to reduce the problems that occur during the manufacture of nano-sized transistors while increasing their performance. The material is Titanium dioxide (TiO2), while the metal gate is Tungsten Silicide (WSiX). The simulated devices conform to the International Technology Roadmap Semiconductor (ITRS) specifications. The results show that Vth is 0.206 ± 12.7% V for high performance (HP) logic technology requirements. 2022-09-28T08:04:22Z 2022-09-28T08:04:22Z 2022-04 Article International Journal of Nanoelectronics and Materials, vol.15(2), 2022, pages 79-90 1985-5761 (Printed) 2232-1535 (online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76250 en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Graphene
Design
Silvaco
n-type
MOSFET
spellingShingle Graphene
Design
Silvaco
n-type
MOSFET
A. H. Afifah Maheran
Izwanizam, Yahaya
F., Salehuddin
K. E., Kaharudin
Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 afifah@utem.edu.my
author_facet afifah@utem.edu.my
A. H. Afifah Maheran
Izwanizam, Yahaya
F., Salehuddin
K. E., Kaharudin
format Article
author A. H. Afifah Maheran
Izwanizam, Yahaya
F., Salehuddin
K. E., Kaharudin
author_sort A. H. Afifah Maheran
title Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate
title_short Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate
title_full Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate
title_fullStr Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate
title_full_unstemmed Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using Double High-ĸ Metal Gate
title_sort design and electrical simulation of a 22nm mosfet with graphene bilayer channel using double high-ĸ metal gate
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2022
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76250
_version_ 1751537897493757952
score 13.160551

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