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Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach

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Main Authors: Cimbri, Davide, Weimann, Nils, Qusay Raghib Ali Al-Taai, Afesomeh, Ofiare, Wasige, Edward
Other Authors: davide.cimbri@glasgow.ac.uk
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
Subjects:
Specific contact resistivity
Transfer length method
E-beam lithography
Ohmic contact
Resonant tunnelling diode
Terahertz oscillator
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75205
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spelling my.unimap-752052022-05-11T03:42:27Z Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach Cimbri, Davide Weimann, Nils Qusay Raghib Ali Al-Taai Afesomeh, Ofiare Wasige, Edward davide.cimbri@glasgow.ac.uk Specific contact resistivity Transfer length method E-beam lithography Ohmic contact Resonant tunnelling diode Terahertz oscillator Link to publisher's homepage at http://ijneam.unimap.edu.my In this paper, we report on a simple test structure which can be used to accurately extract the specific contact resistivity ρc associated with metal-n++ InGaAs-based low-resistance Ohmic contacts through the transfer length method (TLM). The structure was designed to avoid common measurement artifacts that typically affect standard layouts. Moreover, microfabrication was optimised to achieve an accurate short minimum gap spacing of 1 μm through a dual-exposure step based on e-beam lithography, which is required for a reliable ρc estimation. Ohmic contacts based on a Ti/Pd/Au metal stack were fabricated and characterised using the proposed structure, resulting in an extracted ρc ≃ 1.37×10−7 Ω cm2 = 13.7 Ω μm2. This work will assist in increasing the quality of Ohmic contacts in high-power InGaAs/AlAs double-barrier resonant tunnelling diodes (RTDs), and so help to overcome one of the bottlenecks to the output power capability of RTD-based oscillators at terahertz frequencies. 2022-05-11T03:42:27Z 2022-05-11T03:42:27Z 2021-12 Article International Journal of Nanoelectronics and Materials, vol.14 (Special Issue), 2021, pages 11-19 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75205 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Specific contact resistivity
Transfer length method
E-beam lithography
Ohmic contact
Resonant tunnelling diode
Terahertz oscillator
spellingShingle Specific contact resistivity
Transfer length method
E-beam lithography
Ohmic contact
Resonant tunnelling diode
Terahertz oscillator
Cimbri, Davide
Weimann, Nils
Qusay Raghib Ali Al-Taai
Afesomeh, Ofiare
Wasige, Edward
Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 davide.cimbri@glasgow.ac.uk
author_facet davide.cimbri@glasgow.ac.uk
Cimbri, Davide
Weimann, Nils
Qusay Raghib Ali Al-Taai
Afesomeh, Ofiare
Wasige, Edward
format Article
author Cimbri, Davide
Weimann, Nils
Qusay Raghib Ali Al-Taai
Afesomeh, Ofiare
Wasige, Edward
author_sort Cimbri, Davide
title Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach
title_short Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach
title_full Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach
title_fullStr Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach
title_full_unstemmed Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach
title_sort ohmic contacts optimisation for high-power ingaas/alas double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2022
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75205
_version_ 1738511719410434048
score 13.214268

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