Comments: Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices

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Bibliographic Details
Main Authors:	Alwan, M. Alwan, Narges, Z. Abdulzahra, Naser Mahmoud, Ahmed, Halim, N.H.A.
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis 2009
Subjects:	Porous silicon Oxidation Optical properties Porous silicon > Optical properties Silicon
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/7119
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