Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009.
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Universiti Malaysia Perlis
2009
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my.unimap-71192009-09-03T02:08:19Z Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices Alwan, M. Alwan Narges, Z. Abdulzahra Naser Mahmoud, Ahmed Halim, N.H.A. Porous silicon Oxidation Optical properties Porous silicon -- Optical properties Silicon Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009. The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, that due to decrease silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO). 2009-09-03T02:08:19Z 2009-09-03T02:08:19Z 2009 Article International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 157-161. 1985-5761 (Printed) 1997-4434 (Online) http://hdl.handle.net/123456789/7119 en Universiti Malaysia Perlis |
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Universiti Malaysia Perlis |
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Malaysia |
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Universiti Malaysia Perlis |
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http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Porous silicon Oxidation Optical properties Porous silicon -- Optical properties Silicon |
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Porous silicon Oxidation Optical properties Porous silicon -- Optical properties Silicon Alwan, M. Alwan Narges, Z. Abdulzahra Naser Mahmoud, Ahmed Halim, N.H.A. Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices |
| description |
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009. |
| format |
Article |
| author |
Alwan, M. Alwan Narges, Z. Abdulzahra Naser Mahmoud, Ahmed Halim, N.H.A. |
| author_facet |
Alwan, M. Alwan Narges, Z. Abdulzahra Naser Mahmoud, Ahmed Halim, N.H.A. |
| author_sort |
Alwan, M. Alwan |
| title |
Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices |
| title_short |
Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices |
| title_full |
Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices |
| title_fullStr |
Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices |
| title_full_unstemmed |
Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices |
| title_sort |
influence of rapid thermal oxidation process on the optoelectronic characteristics of psi devices |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2009 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/7119 |
| _version_ |
1643788696117313536 |
| score |
13.222552 |