Simulation using default model in ATHENA/SSUPREM4

Organized by Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM), 18th - 19th May 2005 at Putra Palace Hotel, Kangar.

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Main Authors: Sharifah Norfaezah, Sabki, M. D. R., Hashim
Format: Working Paper
Language:English
Published: Kolej Universiti Kejuruteraan Utara Malaysia 2009
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Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/7103
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spelling my.unimap-71032009-08-28T02:04:42Z Simulation using default model in ATHENA/SSUPREM4 Sharifah Norfaezah, Sabki M. D. R., Hashim Ion implantation Diffusion processes CMOS transistors Transient enhanced diffusion (TED) Organized by Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM), 18th - 19th May 2005 at Putra Palace Hotel, Kangar. Ion implantation and diffusion processes are very important in the fabrication of bipolar and CMOS transistors. High selectivity’s of ion implantation plays a very important role in forming active device region and low ohmic contact. While annealing process after ion implantation is needed to activate the dopant and repair the damage. However, the diffusion process is accompanied by an anomalous transient enhanced diffusion (TED) of dopant. In order to study the ion implantation and diffusion processes, a process simulation using SSUPREM4 module in ATHENA is the easiest way to be used. However to study and to model the TED, a correct modelling must be adopted. As the right method, the simulation had to start with the default model before any other model can be used. The model is conducted using SSUPREM4 module in the process simulator ATHENA in SILVACO. 2009-08-28T01:21:02Z 2009-08-28T01:21:02Z 2005-05-18 Working Paper p.109-111 http://hdl.handle.net/123456789/7103 en Proceedings of the 1st National Conference on Electronic Design Kolej Universiti Kejuruteraan Utara Malaysia
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Ion implantation
Diffusion processes
CMOS transistors
Transient enhanced diffusion (TED)
spellingShingle Ion implantation
Diffusion processes
CMOS transistors
Transient enhanced diffusion (TED)
Sharifah Norfaezah, Sabki
M. D. R., Hashim
Simulation using default model in ATHENA/SSUPREM4
description Organized by Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM), 18th - 19th May 2005 at Putra Palace Hotel, Kangar.
format Working Paper
author Sharifah Norfaezah, Sabki
M. D. R., Hashim
author_facet Sharifah Norfaezah, Sabki
M. D. R., Hashim
author_sort Sharifah Norfaezah, Sabki
title Simulation using default model in ATHENA/SSUPREM4
title_short Simulation using default model in ATHENA/SSUPREM4
title_full Simulation using default model in ATHENA/SSUPREM4
title_fullStr Simulation using default model in ATHENA/SSUPREM4
title_full_unstemmed Simulation using default model in ATHENA/SSUPREM4
title_sort simulation using default model in athena/ssuprem4
publisher Kolej Universiti Kejuruteraan Utara Malaysia
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/7103
_version_ 1643788685498384384
score 13.222552