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A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation

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Main Authors: Madnarski Sutikno, Uda, Hashim, Prof. Dr., Zul Azhar, Zahid Jamal, Prof. Dr.
Format: Article
Language:English
Published: Elsevier B.V. 2009
Subjects:
Pattern-dependent oxidation
Quantum dot
Rapid thermal processing
Reconstruction method
Quantum electronics
Single-electron transistor (SET)
Tunneling effects
Transistors > Design and construction
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/6796
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spelling my.unimap-67962013-11-20T04:02:33Z A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation Madnarski Sutikno Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. Pattern-dependent oxidation Quantum dot Rapid thermal processing Reconstruction method Quantum electronics Single-electron transistor (SET) Tunneling effects Transistors -- Design and construction Link to publisher's homepage at www.elsevier.com The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, high contrast surface and high smoothness surface were used to optimize the etch process. Si nanostructures oxidation using either oxidation furnace or rapid thermal processing (RTP) equipment can result in silicon dioxide (SiO2)-embedded-Si. In this research, we compare the furnace-oxidized-Si nanostructures with the RTP-oxidized-Si nanostructures. The oxidation rate of Si nanostructures using a furnace is 0.36 nm/s, while the oxidation rate of Si nanostructures using RTP is 2.16 nm/s. 2009-08-11T02:13:57Z 2009-08-11T02:13:57Z 2007-05 Article vol.39 (5), 2008, pages 727-731. 0959-8324 http://www.sciencedirect.com/science/journal/00262692 http://hdl.handle.net/123456789/6796 en Elsevier B.V.
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Pattern-dependent oxidation
Quantum dot
Rapid thermal processing
Reconstruction method
Quantum electronics
Single-electron transistor (SET)
Tunneling effects
Transistors -- Design and construction
spellingShingle Pattern-dependent oxidation
Quantum dot
Rapid thermal processing
Reconstruction method
Quantum electronics
Single-electron transistor (SET)
Tunneling effects
Transistors -- Design and construction
Madnarski Sutikno
Uda, Hashim, Prof. Dr.
Zul Azhar, Zahid Jamal, Prof. Dr.
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
description Link to publisher's homepage at www.elsevier.com
format Article
author Madnarski Sutikno
Uda, Hashim, Prof. Dr.
Zul Azhar, Zahid Jamal, Prof. Dr.
author_facet Madnarski Sutikno
Uda, Hashim, Prof. Dr.
Zul Azhar, Zahid Jamal, Prof. Dr.
author_sort Madnarski Sutikno
title A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
title_short A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
title_full A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
title_fullStr A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
title_full_unstemmed A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
title_sort simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
publisher Elsevier B.V.
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/6796
_version_ 1643788627355893760
score 13.214268

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