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Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process

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Main Authors: Sutikno, Madnasri, Uda, Hashim, Zul Azhar, Zahid Jamal
Format: Article
Language:English
Published: IOP Publishing Ltd 2009
Subjects:
Silicon dioxide
Quantum dots
Transistors
Oxidation
Quantum electronics
Semiconductors
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/6699
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spelling my.unimap-66992009-08-07T08:10:39Z Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process Sutikno, Madnasri Uda, Hashim Zul Azhar, Zahid Jamal Silicon dioxide Quantum dots Transistors Oxidation Quantum electronics Semiconductors Link to publisher's homepage at http://iopscience.iop.org The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using a systematic oxidation technique known as the pattern-dependent oxidation (PADOX) process. For comparison, two oxidation processes using conventional furnace and rapid thermal processing (RTP) were used. The oxidation temperature for both oxidation processes was set at 1000°C and the oxygen flow rate in the furnace was set at 1 l min-1. The nanostructures were characterized using AFM, SEM and TEM to determine the quality and the stoichiometry of the Si QDs and the oxides. The oxidation rate using a furnace is 0.36 nm s-1, significantly lower than the RTP value which is 2.16 nm s-1. Meanwhile, the oxygen contents in SiO2 grown by furnace and RTP are approximately the same. 2009-08-07T07:47:50Z 2009-08-07T07:47:50Z 2008-01-29 Article Nanotechnology, vol.19 (7), 2008, pages 1-6. 0957-4484 http://iopscience.iop.org/0957-4484/19/7/075302/?ejredirect=.iopscience http://hdl.handle.net/123456789/6699 en IOP Publishing Ltd
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Silicon dioxide
Quantum dots
Transistors
Oxidation
Quantum electronics
Semiconductors
spellingShingle Silicon dioxide
Quantum dots
Transistors
Oxidation
Quantum electronics
Semiconductors
Sutikno, Madnasri
Uda, Hashim
Zul Azhar, Zahid Jamal
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
description Link to publisher's homepage at http://iopscience.iop.org
format Article
author Sutikno, Madnasri
Uda, Hashim
Zul Azhar, Zahid Jamal
author_facet Sutikno, Madnasri
Uda, Hashim
Zul Azhar, Zahid Jamal
author_sort Sutikno, Madnasri
title Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
title_short Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
title_full Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
title_fullStr Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
title_full_unstemmed Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
title_sort fabrication and characterization of si quantum dots and sio2 tunnel barriers grown by a controlled oxidation process
publisher IOP Publishing Ltd
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/6699
_version_ 1643788579329015808
score 13.223943

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