Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD

• Main Authors: Arsyad, F. S., Subagio, A., Sutanto, H., Arifin, P., Budiman, M., Barmawi, M., Husien, I., Zul Azhar, Zahid Jamal
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineering (IEEE) 2009
• Subjects: Aluminium compounds; Atomic force microscopy; Semiconductor quantum dots; Silicon; Wide band gap semiconductors; PA-MOCVD; GaN Quantum Dot; [(C2H5)4]Si; Deposition
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/6698

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