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GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer

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Main Authors: Chuah, Lee Siang, Z., Hassan, H., Abu Hassan, Naser Mahmoud, Ahmed
Format: Article
Language:English
Published: Elsevier B.V. 2009
Subjects:
AlN
GaN
Photodiode
Schottky barrier height
Thermal annealing
Films
Semiconductors > Materials
Gallium nitride
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/6663
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spelling my.unimap-66632009-08-02T08:07:41Z GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer Chuah, Lee Siang Z., Hassan H., Abu Hassan Naser Mahmoud, Ahmed AlN GaN Photodiode Schottky barrier height Thermal annealing Films Semiconductors -- Materials Gallium nitride Link to publisher's homepage at http://www.elsevier.com/wps/find/homepage.cws_home In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN surface. Current-voltage (I-V) measurements before and after heat treatment were carried out. Different annealing temperatures (500-700 °C) were investigated. Under dark condition, the Schottky barrier height (SBH) derived by the I-V method is 0.48 eV for as-deposited Ni/AlN/GaN/AlN Schottky diode. On the other hand, the effective barrier heights of 0.52, 0.55, and 0.57 eV were obtained for Schottky diodes annealed at 500, 600, and 700 °C, respectively. We found that the SBHs of annealed Schottky diodes under dark and illuminated conditions were observed to be higher relative to the as-deposited Schottky diode. When annealed at 700 °C, the resulting Schottky diodes show a dark current of as low as 5.05 × 10-5 A at 10 V bias, which is about two orders of magnitude lower than that of as-deposited Ni/AlN/GaN/AlN Schottky diode (2.37 × 10-3 A at 10 V bias). When the sample was under illumination condition, the change of current was significant for the annealed samples as compared to the as-deposited sample. 2009-08-02T08:06:47Z 2009-08-02T08:06:47Z 2009-07 Article Journal of Alloys and Compounds, vol.481 (1-2), 2009, pages L15-L19 0925-8388 http://www.sciencedirect.com/science/journal/09258388 http://hdl.handle.net/123456789/6663 en Elsevier B.V.
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic AlN
GaN
Photodiode
Schottky barrier height
Thermal annealing
Films
Semiconductors -- Materials
Gallium nitride
spellingShingle AlN
GaN
Photodiode
Schottky barrier height
Thermal annealing
Films
Semiconductors -- Materials
Gallium nitride
Chuah, Lee Siang
Z., Hassan
H., Abu Hassan
Naser Mahmoud, Ahmed
GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
description Link to publisher's homepage at http://www.elsevier.com/wps/find/homepage.cws_home
format Article
author Chuah, Lee Siang
Z., Hassan
H., Abu Hassan
Naser Mahmoud, Ahmed
author_facet Chuah, Lee Siang
Z., Hassan
H., Abu Hassan
Naser Mahmoud, Ahmed
author_sort Chuah, Lee Siang
title GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
title_short GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
title_full GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
title_fullStr GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
title_full_unstemmed GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
title_sort gan schottky barrier photodiode on si (1 1 1) with low-temperature-grown cap layer
publisher Elsevier B.V.
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/6663
_version_ 1643788535636951040
score 13.222552

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