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Electrical and structural properties of flash evaporation InSb thin films

Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1, 2009.

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Bibliographic Details
Main Authors: Al-Ani, S.K.J., Obaid, Y.N., Kasim, S.J., Mahdi, M.A.
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2009
Subjects:
InSb thin films
Flash evaporation
X-ray diffraction
Hall Effect
Electrical conductivity
Indium antimonide
Electric conductivity > Measurement
Thin films
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/5337
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spelling my.unimap-53372009-11-25T08:43:30Z Electrical and structural properties of flash evaporation InSb thin films Al-Ani, S.K.J. Obaid, Y.N. Kasim, S.J. Mahdi, M.A. InSb thin films Flash evaporation X-ray diffraction Hall Effect Electrical conductivity Indium antimonide Electric conductivity -- Measurement Thin films Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1, 2009. Indium antimonide (InSb) thin films were prepared on glass substrates by flash evaporation technique of a stoichiometric bulk of InSb at different substrate temperatures Ts= (300,320,350)°C. Films thickness were in the range of t= (0.2 -0.6) µm. X-ray diffraction patterns on InSb powder and thin films were given. The patterns showed that all films were stoichiometric and the crytallinity degree was improved with increasing of the substrate temperature and film thickness. The Hall effect measurements at room temperature showed that all films have n-type conductivity except the film of 0.2 µm thickness prepared at Ts=350 °C was p-type conductivity. The electrical cnductivity was studied in temperature range (25-200) °C and it was decreased with increased the substrate temperature for all samples. The carrier's mobility at room temperature was found to be increased with film thickness and substrate temperature. 2009-04-06T13:25:27Z 2009-04-06T13:25:27Z 2009 Article International Journal of Nanoelectronics and Materials, vol. 2 (1), 2009, pages 99-109. 1985-5761 (Printed) 1997-4434 (Online) http://hdl.handle.net/123456789/5337 http://www.unimap.edu.my en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic InSb thin films
Flash evaporation
X-ray diffraction
Hall Effect
Electrical conductivity
Indium antimonide
Electric conductivity -- Measurement
Thin films
spellingShingle InSb thin films
Flash evaporation
X-ray diffraction
Hall Effect
Electrical conductivity
Indium antimonide
Electric conductivity -- Measurement
Thin films
Al-Ani, S.K.J.
Obaid, Y.N.
Kasim, S.J.
Mahdi, M.A.
Electrical and structural properties of flash evaporation InSb thin films
description Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1, 2009.
format Article
author Al-Ani, S.K.J.
Obaid, Y.N.
Kasim, S.J.
Mahdi, M.A.
author_facet Al-Ani, S.K.J.
Obaid, Y.N.
Kasim, S.J.
Mahdi, M.A.
author_sort Al-Ani, S.K.J.
title Electrical and structural properties of flash evaporation InSb thin films
title_short Electrical and structural properties of flash evaporation InSb thin films
title_full Electrical and structural properties of flash evaporation InSb thin films
title_fullStr Electrical and structural properties of flash evaporation InSb thin films
title_full_unstemmed Electrical and structural properties of flash evaporation InSb thin films
title_sort electrical and structural properties of flash evaporation insb thin films
publisher Universiti Malaysia Perlis
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/5337
_version_ 1643788365472989184
score 13.214268

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