Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)

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Main Authors: Sharma, Prachi, Gupta, Navneet
Other Authors: prachi.sharma@pilani.bits-pilani.ac.in
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2017
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Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49933
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spelling my.unimap-499332017-11-21T01:20:29Z Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT) Sharma, Prachi Gupta, Navneet prachi.sharma@pilani.bits-pilani.ac.in ngupta@pilani.bits-pilani.ac.in Nanocrystalline silicon Thin film transistor TCAD ATLAS Channel length Density of states Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this paper, we have presented the effect of the density-of-states (DOS) parameters on the performance of n-channel top gated staggered nc-Si TFT. The analysis was performed using ATLAS 2D TCAD simulator from SILVACO. The variation in DOS in nc-Si material and thus on the TFT device performance occurred by altering the channel length and channel quality is presented. The simulation results reveal that the increase in channel length and the degradation in channel quality degrade the trans-conductance and drain current. By iterating the order of parasitic resistance and the value of characteristic decay energy related to material quality, the same trend is achieved for simulated and experimental results for nc- Si TFT with W/L=200μm/50μm. 2017-10-11T03:36:00Z 2017-10-11T03:36:00Z 2017 Article International Journal of Nanoelectronics and Materials, vol.10 (2), 2017, pages 101-110 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49933 en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Nanocrystalline silicon
Thin film transistor
TCAD
ATLAS
Channel length
Density of states
spellingShingle Nanocrystalline silicon
Thin film transistor
TCAD
ATLAS
Channel length
Density of states
Sharma, Prachi
Gupta, Navneet
Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 prachi.sharma@pilani.bits-pilani.ac.in
author_facet prachi.sharma@pilani.bits-pilani.ac.in
Sharma, Prachi
Gupta, Navneet
format Article
author Sharma, Prachi
Gupta, Navneet
author_sort Sharma, Prachi
title Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
title_short Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
title_full Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
title_fullStr Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
title_full_unstemmed Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
title_sort two dimensional simulation and analysis of density-of-states (dos) in top-gated nanocrystalline silicon thin film transistor (nc-si tft)
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2017
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49933
_version_ 1643802826897358848
score 13.222552