Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT)
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2017
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my.unimap-499332017-11-21T01:20:29Z Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT) Sharma, Prachi Gupta, Navneet prachi.sharma@pilani.bits-pilani.ac.in ngupta@pilani.bits-pilani.ac.in Nanocrystalline silicon Thin film transistor TCAD ATLAS Channel length Density of states Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this paper, we have presented the effect of the density-of-states (DOS) parameters on the performance of n-channel top gated staggered nc-Si TFT. The analysis was performed using ATLAS 2D TCAD simulator from SILVACO. The variation in DOS in nc-Si material and thus on the TFT device performance occurred by altering the channel length and channel quality is presented. The simulation results reveal that the increase in channel length and the degradation in channel quality degrade the trans-conductance and drain current. By iterating the order of parasitic resistance and the value of characteristic decay energy related to material quality, the same trend is achieved for simulated and experimental results for nc- Si TFT with W/L=200μm/50μm. 2017-10-11T03:36:00Z 2017-10-11T03:36:00Z 2017 Article International Journal of Nanoelectronics and Materials, vol.10 (2), 2017, pages 101-110 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49933 en Universiti Malaysia Perlis (UniMAP) |
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Nanocrystalline silicon Thin film transistor TCAD ATLAS Channel length Density of states |
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Nanocrystalline silicon Thin film transistor TCAD ATLAS Channel length Density of states Sharma, Prachi Gupta, Navneet Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT) |
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Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
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prachi.sharma@pilani.bits-pilani.ac.in |
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prachi.sharma@pilani.bits-pilani.ac.in Sharma, Prachi Gupta, Navneet |
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Article |
author |
Sharma, Prachi Gupta, Navneet |
author_sort |
Sharma, Prachi |
title |
Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT) |
title_short |
Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT) |
title_full |
Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT) |
title_fullStr |
Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT) |
title_full_unstemmed |
Two dimensional simulation and analysis of density-of-states (DOS) in top-gated nanocrystalline silicon thin film transistor (nc-Si TFT) |
title_sort |
two dimensional simulation and analysis of density-of-states (dos) in top-gated nanocrystalline silicon thin film transistor (nc-si tft) |
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Universiti Malaysia Perlis (UniMAP) |
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2017 |
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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49933 |
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1643802826897358848 |
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13.222552 |