Optimization of silver-assisted nano-pillar etching process in silicon

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Main Authors: Ayu Wazira, Azhari, Kamaruzzaman, Sopian, Mohd Khairunaz, Mat Desa, Saleem Hussain, Zaidi
Other Authors: ayuwazira@unimap.edu.my
Format: Article
Language:English
Published: Elsevier 2016
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Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41251
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spelling my.unimap-412512016-04-01T09:14:08Z Optimization of silver-assisted nano-pillar etching process in silicon Ayu Wazira, Azhari Kamaruzzaman, Sopian Mohd Khairunaz, Mat Desa Saleem Hussain, Zaidi ayuwazira@unimap.edu.my saleemzaidi@ukm.edu.my Box-Behnken design Metal assisted chemical etching Nano-texturing Response surface methodology Si nanostructures Link to publisher's homepage at http://www.journals.elsevier.com/ In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R 2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69nm while the maximum etching rate is estimated at around 360nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively. 2016-04-01T09:14:08Z 2016-04-01T09:14:08Z 2015-12-01 Article Applied Surface Science, vol. 357, 2015, pages 1863–1877 0169-4332 http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41251 doi:10.1016/j.apsusc.2015.09.088 en Elsevier
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Box-Behnken design
Metal assisted chemical etching
Nano-texturing
Response surface methodology
Si nanostructures
spellingShingle Box-Behnken design
Metal assisted chemical etching
Nano-texturing
Response surface methodology
Si nanostructures
Ayu Wazira, Azhari
Kamaruzzaman, Sopian
Mohd Khairunaz, Mat Desa
Saleem Hussain, Zaidi
Optimization of silver-assisted nano-pillar etching process in silicon
description Link to publisher's homepage at http://www.journals.elsevier.com/
author2 ayuwazira@unimap.edu.my
author_facet ayuwazira@unimap.edu.my
Ayu Wazira, Azhari
Kamaruzzaman, Sopian
Mohd Khairunaz, Mat Desa
Saleem Hussain, Zaidi
format Article
author Ayu Wazira, Azhari
Kamaruzzaman, Sopian
Mohd Khairunaz, Mat Desa
Saleem Hussain, Zaidi
author_sort Ayu Wazira, Azhari
title Optimization of silver-assisted nano-pillar etching process in silicon
title_short Optimization of silver-assisted nano-pillar etching process in silicon
title_full Optimization of silver-assisted nano-pillar etching process in silicon
title_fullStr Optimization of silver-assisted nano-pillar etching process in silicon
title_full_unstemmed Optimization of silver-assisted nano-pillar etching process in silicon
title_sort optimization of silver-assisted nano-pillar etching process in silicon
publisher Elsevier
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41251
_version_ 1643799623423229952
score 13.159267