Cover Image

Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet

Received a Gold medal and in 25th International Invention, Innovation & Technology Exhibition (ITEX'14), 8th-10th May at Kuala Lumpur Convention Centre.

Saved in:
Bibliographic Details
Main Authors: Mohd Khairuddin, Md Arshad, Dr., Uda, Hashim, Prof. Dr., Noraini, Othman
Other Authors: mohd.khairuddin@unimap.edu.my
Format: Other
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2014
Subjects:
International Invention, Innovation & Technology Exhibition (ITEX'14)
Silicon-on-Insulator (SOl)
SOl MOSFETs
Research and innovation
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/37037
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-37037
record_format dspace
spelling my.unimap-370372014-09-02T08:25:47Z Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet Mohd Khairuddin, Md Arshad, Dr. Uda, Hashim, Prof. Dr. Noraini, Othman mohd.khairuddin@unimap.edu.my International Invention, Innovation & Technology Exhibition (ITEX'14) Silicon-on-Insulator (SOl) SOl MOSFETs Research and innovation Received a Gold medal and in 25th International Invention, Innovation & Technology Exhibition (ITEX'14), 8th-10th May at Kuala Lumpur Convention Centre. Fully-depletion operation is mandatory requirement for ultra-scaled devices (Le. < 45 nm technology) which only can be achieved either multi-gate (Le. FinFET) or thin body Silicon-on-Insulator (SOl). Thin body SOl offers another interesting feature compared to any other technologies i.e. back-gate biasing. In this invention, we utilize asymmetrical contact from the top which provide improved performance and better controlled of short-channel effects in thin body and thin buried oxide of SOl MOSFETs. 2014-09-02T08:25:47Z 2014-09-02T08:25:47Z 2014-05 Other http://dspace.unimap.edu.my:80/dspace/handle/123456789/37037 en 25th International Invention, Innovation & Technology Exhibition;;ITEX'14 Universiti Malaysia Perlis (UniMAP) Institute of Nano Engineering Electronic
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic International Invention, Innovation & Technology Exhibition (ITEX'14)
Silicon-on-Insulator (SOl)
SOl MOSFETs
Research and innovation
spellingShingle International Invention, Innovation & Technology Exhibition (ITEX'14)
Silicon-on-Insulator (SOl)
SOl MOSFETs
Research and innovation
Mohd Khairuddin, Md Arshad, Dr.
Uda, Hashim, Prof. Dr.
Noraini, Othman
Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet
description Received a Gold medal and in 25th International Invention, Innovation & Technology Exhibition (ITEX'14), 8th-10th May at Kuala Lumpur Convention Centre.
author2 mohd.khairuddin@unimap.edu.my
author_facet mohd.khairuddin@unimap.edu.my
Mohd Khairuddin, Md Arshad, Dr.
Uda, Hashim, Prof. Dr.
Noraini, Othman
format Other
author Mohd Khairuddin, Md Arshad, Dr.
Uda, Hashim, Prof. Dr.
Noraini, Othman
author_sort Mohd Khairuddin, Md Arshad, Dr.
title Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet
title_short Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet
title_full Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet
title_fullStr Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet
title_full_unstemmed Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet
title_sort asymmetrical double gate: significant improvement in ultra-scaled sol mosfet
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/37037
_version_ 1643798313494904832
score 13.214268

Similar Items