Description: Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet

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Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet

Received a Gold medal and in 25th International Invention, Innovation & Technology Exhibition (ITEX'14), 8th-10th May at Kuala Lumpur Convention Centre.

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Bibliographic Details
Main Authors:	Mohd Khairuddin, Md Arshad, Dr., Uda, Hashim, Prof. Dr., Noraini, Othman
Other Authors:	mohd.khairuddin@unimap.edu.my
Format:	Other
Language:	English
Published:	Universiti Malaysia Perlis (UniMAP) 2014
Subjects:	International Invention, Innovation & Technology Exhibition (ITEX'14) Silicon-on-Insulator (SOl) SOl MOSFETs Research and innovation
Online Access:	http://dspace.unimap.edu.my:80/dspace/handle/123456789/37037
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Description
Summary:	Received a Gold medal and in 25th International Invention, Innovation & Technology Exhibition (ITEX'14), 8th-10th May at Kuala Lumpur Convention Centre.