UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
Link to publisher's homepage at http://www.elsevier.com/
Saved in:
Main Authors: | Mohd Khairuddin, Md. Arshad, Makovejev, Sergej, Olsen, Sarah H., Andrieu, F., Raskin, Jean Pierre, Flandre, Denis, Kilchytska, Valeriya I. |
---|---|
Other Authors: | mohd.khairuddin@unimap.edu.my |
Format: | Article |
Language: | English |
Published: |
Elsevier Ltd.
2014
|
Subjects: | |
Online Access: | http://dspace.unimap.edu.my:80/dspace/handle/123456789/34409 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs
by: Makovejev, Sergej, et al.
Published: (2013) -
Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs
by: Mohd Khairuddin, Md Arshad, Dr., et al.
Published: (2013) -
Virtual fabrication of 14nm gate length n-Type double gate MOSFET
by: Afifah Maheran A. H, et al.
Published: (2023) -
Pemohon perlu penuhi syarat program pengajian, merit
by: Mohd Khairul Anam, Md Khairudin
Published: (2020) -
RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
by: Mohd Khairuddin, Md Arshad, Dr., et al.
Published: (2013)