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UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

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Main Authors: Mohd Khairuddin, Md. Arshad, Makovejev, Sergej, Olsen, Sarah H., Andrieu, F., Raskin, Jean Pierre, Flandre, Denis, Kilchytska, Valeriya I.
Other Authors: mohd.khairuddin@unimap.edu.my
Format: Article
Language:English
Published: Elsevier Ltd. 2014
Subjects:
Analog figures of merit
Asymmetrical double gate
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/34409
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spelling my.unimap-344092014-05-12T03:41:25Z UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime Mohd Khairuddin, Md. Arshad Makovejev, Sergej Olsen, Sarah H. Andrieu, F. Raskin, Jean Pierre Flandre, Denis Kilchytska, Valeriya I. mohd.khairuddin@unimap.edu.my Analog figures of merit Asymmetrical double gate Link to publisher's homepage at http://www.elsevier.com/ In this work we investigate the effect of ground plane (GP) on analog figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Based on experimental devices, both n- and p-type GP configurations are considered and compared with standard no-GP substrates. In a standard single-gate (SG) regime, the effect of GP implementation on analog FoM (related to slightly higher body factor and improved gate-to-channel coupling) is negligible. Moreover, p-GP implementation allows higher intrinsic gain at high frequency compared with no-GP and n-GP substrates. Furthermore, we demonstrate that application of an asymmetric double-gate (ADG) (i.e. front-gate to back-gate/substrate connection) regime allows better control of short-channel effects in terms of drain induced barrier lowering, subthreshold slope and threshold voltage control, due to improved gate(s)-to-channel coupling. Application of an ADG mode is shown to enhance analog FoM such as transconductance, drive current and intrinsic gain of UTBB SOI MOSFETs. Finally, simulations predict that improvements of analog FoM provided by ADG mode can be obtained in the whole dynamic operation range. Moreover, ADG mode provides elimination of the high-frequency substrate coupling effects. 2014-05-12T03:41:25Z 2014-05-12T03:41:25Z 2013 Article Solid-State Electronics, vol. 90, 2013, pages 56-64 0038-1101 http://www.sciencedirect.com/science/article/pii/S0038110113001123 http://dspace.unimap.edu.my:80/dspace/handle/123456789/34409 en Elsevier Ltd.
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Analog figures of merit
Asymmetrical double gate
spellingShingle Analog figures of merit
Asymmetrical double gate
Mohd Khairuddin, Md. Arshad
Makovejev, Sergej
Olsen, Sarah H.
Andrieu, F.
Raskin, Jean Pierre
Flandre, Denis
Kilchytska, Valeriya I.
UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
description Link to publisher's homepage at http://www.elsevier.com/
author2 mohd.khairuddin@unimap.edu.my
author_facet mohd.khairuddin@unimap.edu.my
Mohd Khairuddin, Md. Arshad
Makovejev, Sergej
Olsen, Sarah H.
Andrieu, F.
Raskin, Jean Pierre
Flandre, Denis
Kilchytska, Valeriya I.
format Article
author Mohd Khairuddin, Md. Arshad
Makovejev, Sergej
Olsen, Sarah H.
Andrieu, F.
Raskin, Jean Pierre
Flandre, Denis
Kilchytska, Valeriya I.
author_sort Mohd Khairuddin, Md. Arshad
title UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
title_short UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
title_full UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
title_fullStr UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
title_full_unstemmed UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
title_sort utbb soi mosfets analog figures of merit: effects of ground plane and asymmetric double-gate regime
publisher Elsevier Ltd.
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/34409
_version_ 1643797481095430144
score 13.214268

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