Fabrication of silicon nitride ion sensitive field-effect transistor for pH measurement and DNA immobilization/hybridization
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2014
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my.unimap-331652014-03-27T07:23:03Z Fabrication of silicon nitride ion sensitive field-effect transistor for pH measurement and DNA immobilization/hybridization Uda, Hashim, Prof. Dr. Soon, Weng Chong Liu, Wei Wen, Dr. uda@unimap.edu.my soonweng86@gmail.com wwliu@unimap.edu.my Ag/AgCl electrodes DNA hybridization DNA immobilization pH measurement Link to publisher's homepage at http://www.hindawi.com/ The fabrication of ion sensitive field-effect transistor (ISFET) using silicon nitride (Si3N4) as the sensing membrane for pH measurement and DNA is reported. For the pH measurement, the Ag/AgCl electrode was used as the reference electrode, and different pH values of buffer solution were used in the ISFET analysis. The ISFET device was tested with pH buffer solutions of pH2, pH3, pH7, pH8, and pH9. The results show that the IV characteristic of ISFET devices is directly proportional and the device's sensitivity was 43.13 mV/pH. The ISFET is modified chemically to allow the integration with biological element to form a biologically active field-effect transistor (BIOFET). It was found that the DNA immobilization activities which occurred on the sensing membrane caused the drain current to drop due to the negatively charged backbones of the DNA probes repelled electrons from accumulating at the conducting channel. The drain current was further decreased when the DNA hybridization took place. 2014-03-27T07:23:03Z 2014-03-27T07:23:03Z 2013 Article Journal of Nanomaterials, vol. 2013, 2013, pages 1-9 1687-4110 http://www.hindawi.com/journals/jnm/2013/542737/ http://dspace.unimap.edu.my:80/dspace/handle/123456789/33165 en Hindawi Publishing Corporation |
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Ag/AgCl electrodes DNA hybridization DNA immobilization pH measurement |
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Ag/AgCl electrodes DNA hybridization DNA immobilization pH measurement Uda, Hashim, Prof. Dr. Soon, Weng Chong Liu, Wei Wen, Dr. Fabrication of silicon nitride ion sensitive field-effect transistor for pH measurement and DNA immobilization/hybridization |
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Link to publisher's homepage at http://www.hindawi.com/ |
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uda@unimap.edu.my |
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uda@unimap.edu.my Uda, Hashim, Prof. Dr. Soon, Weng Chong Liu, Wei Wen, Dr. |
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Article |
author |
Uda, Hashim, Prof. Dr. Soon, Weng Chong Liu, Wei Wen, Dr. |
author_sort |
Uda, Hashim, Prof. Dr. |
title |
Fabrication of silicon nitride ion sensitive field-effect transistor for pH measurement and DNA immobilization/hybridization |
title_short |
Fabrication of silicon nitride ion sensitive field-effect transistor for pH measurement and DNA immobilization/hybridization |
title_full |
Fabrication of silicon nitride ion sensitive field-effect transistor for pH measurement and DNA immobilization/hybridization |
title_fullStr |
Fabrication of silicon nitride ion sensitive field-effect transistor for pH measurement and DNA immobilization/hybridization |
title_full_unstemmed |
Fabrication of silicon nitride ion sensitive field-effect transistor for pH measurement and DNA immobilization/hybridization |
title_sort |
fabrication of silicon nitride ion sensitive field-effect transistor for ph measurement and dna immobilization/hybridization |
publisher |
Hindawi Publishing Corporation |
publishDate |
2014 |
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http://dspace.unimap.edu.my:80/dspace/handle/123456789/33165 |
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1643797086675664896 |
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13.214268 |