Sol-gel BST thin films for FeFET applications : fabrication and characterization

The effect of the chemical composition and film thickness of the ferroelectric barium strontium titanate (BST) at the memory window behavior of Al/BST/SiO2/Si-Gatefield effect transistor structure has been investigated. BaxSr1-xTiO3 thin films with different x values and film thickness have been f...

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Bibliographic Details
Main Author: Ala’eddin, Ahmad Jaber Saif
Format: Thesis
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2014
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Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/31170
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