RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs

• Main Authors: Mohd Khairuddin, Md Arshad, Dr., Mostafa, Emam, Kilchytska, Valeria I., Dr., Andrieu, François, Dr., Flandre, Denis, Prof., Raskin, Jean-Pierre P., Prof.
• Other Authors: [e-mail]
• Format: Working Paper
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE) 2013
• Subjects: Capacitance; Equivalent circuits; Logic gates; MOSFETs; Radio frequency; Substrates; Ultra-thin body with ultra-thin buried oxide (UTBB); Parasitic capacitance
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/23994

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