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RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs

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Main Authors: Mohd Khairuddin, Md Arshad, Dr., Mostafa, Emam, Kilchytska, Valeria I., Dr., Andrieu, François, Dr., Flandre, Denis, Prof., Raskin, Jean-Pierre P., Prof.
Other Authors: mohd.khairuddin@unimap.edu.my
Format: Working Paper
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2013
Subjects:
Capacitance
Equivalent circuits
Logic gates
MOSFETs
Radio frequency
Substrates
Ultra-thin body with ultra-thin buried oxide (UTBB)
Parasitic capacitance
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/23994
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spelling my.unimap-239942013-03-08T02:06:35Z RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs Mohd Khairuddin, Md Arshad, Dr. Mostafa, Emam Kilchytska, Valeria I., Dr. Andrieu, François, Dr. Flandre, Denis, Prof. Raskin, Jean-Pierre P., Prof. mohd.khairuddin@unimap.edu.my mohd.mdarshad@uclouvain.be jean-pierre.raskin@uclouvain.be pascal.scheiblin@cea.fr Capacitance Equivalent circuits Logic gates MOSFETs Radio frequency Substrates Ultra-thin body with ultra-thin buried oxide (UTBB) Parasitic capacitance Link to publisher's homepage at http://ieeexplore.ieee.org/ RF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency f T and maximum oscillation frequency f max of 160 GHz and 143 GHz, respectively, are demonstrated. Based on an accurate extraction of the small-signal equivalent circuit of UTBB MOSFET over a wide frequency range, it is revealed that ground plane (GP) implementation (i.e. highly-doped region underneath the BOX)does not increase the high frequency parasitic capacitances, and thus does not degrade the RF performance of UTBB devices. 2013-03-08T02:06:35Z 2013-03-08T02:06:35Z 2012-01 Working Paper p.105-108 978-145771316-3 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6160155&contentType=Conference+Publications http://hdl.handle.net/123456789/23994 en Proceeding of the IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2012) Institute of Electrical and Electronics Engineers (IEEE)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Capacitance
Equivalent circuits
Logic gates
MOSFETs
Radio frequency
Substrates
Ultra-thin body with ultra-thin buried oxide (UTBB)
Parasitic capacitance
spellingShingle Capacitance
Equivalent circuits
Logic gates
MOSFETs
Radio frequency
Substrates
Ultra-thin body with ultra-thin buried oxide (UTBB)
Parasitic capacitance
Mohd Khairuddin, Md Arshad, Dr.
Mostafa, Emam
Kilchytska, Valeria I., Dr.
Andrieu, François, Dr.
Flandre, Denis, Prof.
Raskin, Jean-Pierre P., Prof.
RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
description Link to publisher's homepage at http://ieeexplore.ieee.org/
author2 mohd.khairuddin@unimap.edu.my
author_facet mohd.khairuddin@unimap.edu.my
Mohd Khairuddin, Md Arshad, Dr.
Mostafa, Emam
Kilchytska, Valeria I., Dr.
Andrieu, François, Dr.
Flandre, Denis, Prof.
Raskin, Jean-Pierre P., Prof.
format Working Paper
author Mohd Khairuddin, Md Arshad, Dr.
Mostafa, Emam
Kilchytska, Valeria I., Dr.
Andrieu, François, Dr.
Flandre, Denis, Prof.
Raskin, Jean-Pierre P., Prof.
author_sort Mohd Khairuddin, Md Arshad, Dr.
title RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
title_short RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
title_full RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
title_fullStr RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
title_full_unstemmed RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
title_sort rf behavior of undoped channel ultra-thin body with ultra-thin box mosfets
publisher Institute of Electrical and Electronics Engineers (IEEE)
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/23994
_version_ 1643794220194988032
score 13.214268

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