Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs

• Main Authors: Mohd Khairuddin, Md Arshad, Dr., Raskin, Jean-Pierre, Prof., Kilchytska, Valeriya, Dr., Andrieu, François, Dr., Scheiblin, Pascal, Faynot, O., Flandre, Denis, Prof.
• Other Authors: [e-mail]
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE) 2013
• Subjects: Drain-induced barrier lowering (DIBL); fully depleted silicon-on-insulator (FDSOI) MOSFETs; ultrathin silicon body and thin buried oxide (UTBB); MASTAR model; Substrate depletion depth (T Sub); Substrate/buried oxide (BOX) interface space-charge condition; Ultrathin silicon body (UTB)
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/23993

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