Comments: FP-LAPW calculations of ground state properties for AlN, GaN and InN compounds

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Bibliographic Details
Main Authors:	Daoudi, B., Sehil, M., Boukraa, A., Abid, H.
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis 2008
Subjects:	FP-LAPW LDA GGA Semiconductors Nitride compound Gallium nitride Semiconductors > Materials
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/2369
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