FP-LAPW calculations of ground state properties for AlN, GaN and InN compounds

• 主要な著者: Daoudi, B., Sehil, M., Boukraa, A., Abid, H.
• フォーマット: 論文
• 言語: English
• 出版事項: Universiti Malaysia Perlis 2008
• 主題: FP-LAPW; LDA; GGA; Semiconductors; Nitride compound; Gallium nitride; Semiconductors > Materials
• オンライン･アクセス: http://dspace.unimap.edu.my/xmlui/handle/123456789/2369

Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008.