實物特徵: FP-LAPW calculations of ground state properties for AlN, GaN and InN compounds

Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008.

Saved in:

書目詳細資料
Main Authors:	Daoudi, B., Sehil, M., Boukraa, A., Abid, H.
格式:	Article
語言:	English
出版:	Universiti Malaysia Perlis 2008
主題:	FP-LAPW LDA GGA Semiconductors Nitride compound Gallium nitride Semiconductors > Materials
在線閱讀:	http://dspace.unimap.edu.my/xmlui/handle/123456789/2369
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

實物特徵
總結:	Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008.