实物特征: FP-LAPW calculations of ground state properties for AlN, GaN and InN compounds

Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008.

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书目详细资料
Main Authors:	Daoudi, B., Sehil, M., Boukraa, A., Abid, H.
格式:	Article
语言:	English
出版:	Universiti Malaysia Perlis 2008
主题:	FP-LAPW LDA GGA Semiconductors Nitride compound Gallium nitride Semiconductors > Materials
在线阅读:	http://dspace.unimap.edu.my/xmlui/handle/123456789/2369
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实物特征
总结:	Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008.