High side MOSFET driver design using discrete components for low voltage applications
International Postgraduate Conference On Engineering (IPCE 2010), 16th - 17th October 2010 organized by Centre for Graduate Studies, Universiti Malaysia Perlis (UniMAP) at School of Mechatronic Engineering, Pauh Putra Campus, Perlis, Malaysia.
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Universiti Malaysia Perlis (UniMAP)
2012
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my.unimap-212312012-10-08T02:36:49Z High side MOSFET driver design using discrete components for low voltage applications Pungut, Ibrahim Rosnazri, Ali Ismail, Daut, Prof. Dr. Soib, Taib, Prof. Madya Dr. Dina Maizana, Maiz Ahmad Risnidar Chan Bahaudin, Ir. pungut@unimap.edu.my soibtaib@eng.usm.my High-side N-channel MOSFET driver Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) MOSFET driver International Postgraduate Conference On Engineering (IPCE 2010), 16th - 17th October 2010 organized by Centre for Graduate Studies, Universiti Malaysia Perlis (UniMAP) at School of Mechatronic Engineering, Pauh Putra Campus, Perlis, Malaysia. This paper presents the design of a high-side N-channel MOSFET driver using discrete components for low voltage applications, ranging from 3V up to 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. The designed high-side driver was tested to observe its performance with respect to different gate input frequencies, from 50Hz up to 150kHz using the MOSFET IRF730 as the switching device. The results obtained indicate that the driver circuit works well up to frequency of 150kHz where the width ratio found to be more than 72%. 2012-10-08T02:36:49Z 2012-10-08T02:36:49Z 2010-10-16 Working Paper 978-967-5760-03-7 http://hdl.handle.net/123456789/21231 en Proceedings of the International Postgraduate Conference on Engineering (IPCE 2010) Universiti Malaysia Perlis (UniMAP) Centre for Graduate Studies |
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High-side N-channel MOSFET driver Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) MOSFET driver |
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High-side N-channel MOSFET driver Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) MOSFET driver Pungut, Ibrahim Rosnazri, Ali Ismail, Daut, Prof. Dr. Soib, Taib, Prof. Madya Dr. Dina Maizana, Maiz Ahmad Risnidar Chan Bahaudin, Ir. High side MOSFET driver design using discrete components for low voltage applications |
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International Postgraduate Conference On Engineering (IPCE 2010), 16th - 17th October 2010 organized by Centre for Graduate Studies, Universiti Malaysia Perlis (UniMAP) at School of Mechatronic Engineering, Pauh Putra Campus, Perlis, Malaysia. |
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pungut@unimap.edu.my |
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pungut@unimap.edu.my Pungut, Ibrahim Rosnazri, Ali Ismail, Daut, Prof. Dr. Soib, Taib, Prof. Madya Dr. Dina Maizana, Maiz Ahmad Risnidar Chan Bahaudin, Ir. |
format |
Working Paper |
author |
Pungut, Ibrahim Rosnazri, Ali Ismail, Daut, Prof. Dr. Soib, Taib, Prof. Madya Dr. Dina Maizana, Maiz Ahmad Risnidar Chan Bahaudin, Ir. |
author_sort |
Pungut, Ibrahim |
title |
High side MOSFET driver design using discrete components for low voltage applications |
title_short |
High side MOSFET driver design using discrete components for low voltage applications |
title_full |
High side MOSFET driver design using discrete components for low voltage applications |
title_fullStr |
High side MOSFET driver design using discrete components for low voltage applications |
title_full_unstemmed |
High side MOSFET driver design using discrete components for low voltage applications |
title_sort |
high side mosfet driver design using discrete components for low voltage applications |
publisher |
Universiti Malaysia Perlis (UniMAP) |
publishDate |
2012 |
url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/21231 |
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1643793312670285824 |
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13.214268 |