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Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI

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Bibliographic Details
Main Author: Rusnita Rafee
Other Authors: Norhawati Ahmad (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Transistors
CMOS transistors
Metal oxide semiconductors, Complementary
Integrated circuits
Computer-aided design
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/2018
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spelling my.unimap-20182008-10-16T03:52:55Z Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI Rusnita Rafee Norhawati Ahmad (Advisor) Transistors CMOS transistors Metal oxide semiconductors, Complementary Integrated circuits Computer-aided design Access is limited to UniMAP community. Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the semiconductor process simulation function and the device function by taking the description of the transistor layout input to simulate the fabrication process and device behavior before the actual silicon is made. This Final Year Project thesis illustrate the use of Synopsys’ Taurus TCAD (TSUPREM-4 and MEDICI) to develop and simulate the fabrication and electrical behavior of 0.13µm NMOS and PMOS transistor. Illustration also includes how process simulation by TSUPREM-4 to produce an output file containing complete structure, mesh and doping information that can be read into MEDICI device simulator to extract electrical characteristics. At the end of this project, the finding shows the threshold voltage and current-voltage curve (ID vs. VGS and ID vs. VDS). The result for electrical characteristics does not show saturation region. There due to the effect of channel length modulation. Beside that, the accuracy of the resistance method is dependent on the threshold voltage. 2008-09-09T07:09:57Z 2008-09-09T07:09:57Z 2008-04 Learning Object http://hdl.handle.net/123456789/2018 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Transistors
CMOS transistors
Metal oxide semiconductors, Complementary
Integrated circuits
Computer-aided design
spellingShingle Transistors
CMOS transistors
Metal oxide semiconductors, Complementary
Integrated circuits
Computer-aided design
Rusnita Rafee
Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
description Access is limited to UniMAP community.
author2 Norhawati Ahmad (Advisor)
author_facet Norhawati Ahmad (Advisor)
Rusnita Rafee
format Learning Object
author Rusnita Rafee
author_sort Rusnita Rafee
title Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
title_short Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
title_full Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
title_fullStr Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
title_full_unstemmed Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
title_sort electrical characterization of 0.13µm cmos transistor using tsuprem-4 and medici
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/2018
_version_ 1643787530791813120
score 13.222552

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