Study the effect of bird’s beak on Fully Recessed LOCOS and Poly Buffered LOCOS using 2 different pad Oxide

• Main Author: Hafizal Hafiz Sarjoni
• Other Authors: Zaliman Sauli, P.M. (Advisor)
• Format: Learning Object
• Language: English
• Published: Universiti Malaysia Perlis 2008
• Subjects: CMOS device; Conventional Local Oxidation (LOCOS); Metal oxide semiconductors, Complementary; Silicon dioxide; Semiconductor engineering; Pad oxide
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/1931

Device isolation is one of the most important technology features towards the realization of very large scale CMOS device integration. Since the early days of semiconductor industry, LOCOS isolation has been the major isolation scheme. However, one of it is major drawback is the oxide encroachment, or so called, bird’s beak beneath under active areas which limits its application in deep sub-micron CMOS technology. This project investigates the use of modified LOCOS structures for example Poly Buffered LOCOS (PBL) and Fully Recessed LOCOS as a bird’s beak suppressing technique. It was found that, Poly Buffered LOCOS and Fully Recessed LOCOS structures, have been dramatically reduce the oxide encroachment beneath the active areas.