The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor

Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-pola...

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Main Author: Hazian, Mamat
Format: Thesis
Language:English
Published: Universiti Malaysia Perlis 2008
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Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1450
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spelling my.unimap-14502009-08-14T08:53:30Z The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor Hazian, Mamat Transistors Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Metal oxide semiconductors Field effect transistors (FETs) Silicon ATLAS (Computer program language) Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-polarity Vg is applied to turn it off. In this research, thorough investigations on process parameters that affect the performance of depletion mode transistor have been studied. The study was emphasized on the ion implantation to forms the depletion channel. It is a very crucial process step in creating a successful depletion type MOSFET. To support the study, Design of Experiment (DOE) for ion implantation dose and energy has been implemented in MIMOS fabrication facility. The 0.5um CMOS process technology was used as a baseline to produce n-type depletion mode MOSFET. Besides running the experiment, simulation software (ATHENA and ATLAS) were used in this study to reduce the cost and time of producing experiment wafers. Comparison of experiment test results and simulation output was also discussed in details in this thesis. On the other hand, problems and observations from the experiment were highlighted and discussed too. One of the main issues is on the two-peak point of transconductance curve. According to the experimental results, it can found that phosphorus ion with dose 3.3e12 cm-2 and energy 60 keV used in depletion channel implant should produce good characteristics of depletion mode MOSFET with threshold voltage -0.7 V. 2008-07-22T08:48:12Z 2008-07-22T08:48:12Z 2008 Thesis http://hdl.handle.net/123456789/1450 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Transistors
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Metal oxide semiconductors
Field effect transistors (FETs)
Silicon
ATLAS (Computer program language)
spellingShingle Transistors
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Metal oxide semiconductors
Field effect transistors (FETs)
Silicon
ATLAS (Computer program language)
Hazian, Mamat
The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
description Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-polarity Vg is applied to turn it off. In this research, thorough investigations on process parameters that affect the performance of depletion mode transistor have been studied. The study was emphasized on the ion implantation to forms the depletion channel. It is a very crucial process step in creating a successful depletion type MOSFET. To support the study, Design of Experiment (DOE) for ion implantation dose and energy has been implemented in MIMOS fabrication facility. The 0.5um CMOS process technology was used as a baseline to produce n-type depletion mode MOSFET. Besides running the experiment, simulation software (ATHENA and ATLAS) were used in this study to reduce the cost and time of producing experiment wafers. Comparison of experiment test results and simulation output was also discussed in details in this thesis. On the other hand, problems and observations from the experiment were highlighted and discussed too. One of the main issues is on the two-peak point of transconductance curve. According to the experimental results, it can found that phosphorus ion with dose 3.3e12 cm-2 and energy 60 keV used in depletion channel implant should produce good characteristics of depletion mode MOSFET with threshold voltage -0.7 V.
format Thesis
author Hazian, Mamat
author_facet Hazian, Mamat
author_sort Hazian, Mamat
title The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_short The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_full The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_fullStr The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_full_unstemmed The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_sort effect of phosphorous implant in converting the enhancement mode transistor into depletion mode transistor
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1450
_version_ 1643787331288694784
score 13.222552