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Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Indium Doped Ba0.5Sr0.5TiO3 Thin Film

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Main Author: Noor Khairul Anuar Johari
Other Authors: Sanna Taking (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Barium strontium titanate (BST)
Chemical solution deposition (CSD)
Indium doped barium strontium titanate (BIST)
Indium
Thin films
Detectors
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1385
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spelling my.unimap-13852008-07-08T07:39:22Z Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Indium Doped Ba0.5Sr0.5TiO3 Thin Film Noor Khairul Anuar Johari Sanna Taking (Advisor) Barium strontium titanate (BST) Chemical solution deposition (CSD) Indium doped barium strontium titanate (BIST) Indium Thin films Detectors Access is limited to UniMAP community. Barium strontium titanate (Ba0.5Sr0.5TiO3) is one of the most important sensing materials for multi-function sensors. Basically, the sensing properties can be controlled by minor modification of the dopants. The purpose of this project is to fabricate barium strontium titanate (BST) and Indium doped barium strontium titanate (BIST) thin films using the chemical solution deposition (CSD) method with 1.00 M precursor. Indium was chosen to be doped into BST because indium was a well known chemical that been used in high performance device such as in the capacitors. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out in a furnace at low temperature and high temperature for 1 hour in oxygen gas atmosphere. The surface roughness and grain size analysis of the grown thin films was characterized using atomic force microscope (AFM) at the analysis area of 250 nm x 250 nm. The rms surface roughness and the grain size of obtained BST and BIST thin films, are been discussed details in this project. When the annealing temperature increased, the rms value for the surface roughness and the grain size will decrease. Therefore, small rms value indicates the smoothness surface due to the ability of electron mobility. While, the longer the annealing time, the lower is the dielectric constant (mechanical properties). For the temperature at 240°C give the most homogenous surface. This can be proved in the Figure 4.12. For high temperature the result was too abnormal and can be concluded as unstable. 2008-07-08T07:39:22Z 2008-07-08T07:39:22Z 2007-03 Learning Object http://hdl.handle.net/123456789/1385 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Barium strontium titanate (BST)
Chemical solution deposition (CSD)
Indium doped barium strontium titanate (BIST)
Indium
Thin films
Detectors
spellingShingle Barium strontium titanate (BST)
Chemical solution deposition (CSD)
Indium doped barium strontium titanate (BIST)
Indium
Thin films
Detectors
Noor Khairul Anuar Johari
Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Indium Doped Ba0.5Sr0.5TiO3 Thin Film
description Access is limited to UniMAP community.
author2 Sanna Taking (Advisor)
author_facet Sanna Taking (Advisor)
Noor Khairul Anuar Johari
format Learning Object
author Noor Khairul Anuar Johari
author_sort Noor Khairul Anuar Johari
title Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Indium Doped Ba0.5Sr0.5TiO3 Thin Film
title_short Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Indium Doped Ba0.5Sr0.5TiO3 Thin Film
title_full Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Indium Doped Ba0.5Sr0.5TiO3 Thin Film
title_fullStr Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Indium Doped Ba0.5Sr0.5TiO3 Thin Film
title_full_unstemmed Effect of Annealing Temperature and Dopant Concentration on the Surface Layer of Indium Doped Ba0.5Sr0.5TiO3 Thin Film
title_sort effect of annealing temperature and dopant concentration on the surface layer of indium doped ba0.5sr0.5tio3 thin film
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1385
_version_ 1643787269041029120
score 13.18916

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