Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material
Link to publisher’s homepage at http://www.myiem.org.my/
Saved in:
Main Author: | |
---|---|
Format: | Article |
Language: | English |
Published: |
The Institution of Engineers, Malaysia
2011
|
Subjects: | |
Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/13826 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.unimap-13826 |
---|---|
record_format |
dspace |
spelling |
my.unimap-138262011-09-19T16:59:41Z Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material Cheong, Kuan Yew, Dr. Metal-oxide semiconductor (MOS) Nitrided gate oxide Silicon carbide (SiC) Nonvolatile random-access memory (NVRAM) Link to publisher’s homepage at http://www.myiem.org.my/ The extraordinary intrinsic properties of silicon carbide (SiC) have made this material a suitablechoice to use in high temperature, high frequency, and high voltage applications. In addition to this, SiC could be employed as the base material for nonvolatile Random Access Memory, mainly due toits extremely low thermal-generation rate at room temperature. In this paper, the reasons of using thismaterial in this particular application are presented and the development of the application over thepast fifteen years is reviewed. 2011-09-19T16:59:40Z 2011-09-19T16:59:40Z 2005-08 Article p. 10-12, 14, 16 0126-9909 http://www.myiem.org.my/content/iem_bulletin_2004_2007-163.aspx http://hdl.handle.net/123456789/13826 en Jurutera 2005 (8) The Institution of Engineers, Malaysia |
institution |
Universiti Malaysia Perlis |
building |
UniMAP Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Malaysia Perlis |
content_source |
UniMAP Library Digital Repository |
url_provider |
http://dspace.unimap.edu.my/ |
language |
English |
topic |
Metal-oxide semiconductor (MOS) Nitrided gate oxide Silicon carbide (SiC) Nonvolatile random-access memory (NVRAM) |
spellingShingle |
Metal-oxide semiconductor (MOS) Nitrided gate oxide Silicon carbide (SiC) Nonvolatile random-access memory (NVRAM) Cheong, Kuan Yew, Dr. Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material |
description |
Link to publisher’s homepage at http://www.myiem.org.my/ |
format |
Article |
author |
Cheong, Kuan Yew, Dr. |
author_facet |
Cheong, Kuan Yew, Dr. |
author_sort |
Cheong, Kuan Yew, Dr. |
title |
Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material |
title_short |
Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material |
title_full |
Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material |
title_fullStr |
Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material |
title_full_unstemmed |
Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material |
title_sort |
silicon carbide (sic) as non-volatile random access memory (nvram) material |
publisher |
The Institution of Engineers, Malaysia |
publishDate |
2011 |
url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/13826 |
_version_ |
1643791070488690688 |
score |
13.222552 |