Description: Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material

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Bibliographic Details
Main Author:	Cheong, Kuan Yew, Dr.
Format:	Article
Language:	English
Published:	The Institution of Engineers, Malaysia 2011
Subjects:	Metal-oxide semiconductor (MOS) Nitrided gate oxide Silicon carbide (SiC) Nonvolatile random-access memory (NVRAM)
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/13826
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Summary:	Link to publisher’s homepage at http://www.myiem.org.my/