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Improvement of SiGe HBT Design and Technology Performance using Device Simulation

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Bibliographic Details
Main Author: Nurradila Ramlan
Other Authors: Syarifah Norfaezah Sabki (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
SiGe technology
Integrated circuits > Design and construction
Semiconductors
Silicon
Germanium
MEDICI simulations
Integrated circuits > Very large scale
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1366
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spelling my.unimap-13662008-07-02T07:55:39Z Improvement of SiGe HBT Design and Technology Performance using Device Simulation Nurradila Ramlan Syarifah Norfaezah Sabki (Advisor) SiGe technology Integrated circuits -- Design and construction Semiconductors Silicon Germanium MEDICI simulations Integrated circuits -- Very large scale Access is limited to UniMAP community. Simulation of the effect of various design parameters on the performance of the HBT is essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. Accurate doping profiles are needed for determining the base resistance and related characteristics. Reliable values of bandgap narrow (BGN), effective density of states and minority and majority carrier mobilities must be determined and used. The increased spacer layer was giving the high current gain and the decrease of base layer also was giving the higher current gain. Improving current gain β will be a significant challenge as the collector and base dopant concentrations are increased. In this project, considerable work on the analysis of available data of material parameters also simulations of HBT characteristics was done with using MEDICI simulations and this work was giving the implement to improve the SiGe technology now days. 2008-07-02T07:55:39Z 2008-07-02T07:55:39Z 2007-04 Learning Object http://hdl.handle.net/123456789/1366 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic SiGe technology
Integrated circuits -- Design and construction
Semiconductors
Silicon
Germanium
MEDICI simulations
Integrated circuits -- Very large scale
spellingShingle SiGe technology
Integrated circuits -- Design and construction
Semiconductors
Silicon
Germanium
MEDICI simulations
Integrated circuits -- Very large scale
Nurradila Ramlan
Improvement of SiGe HBT Design and Technology Performance using Device Simulation
description Access is limited to UniMAP community.
author2 Syarifah Norfaezah Sabki (Advisor)
author_facet Syarifah Norfaezah Sabki (Advisor)
Nurradila Ramlan
format Learning Object
author Nurradila Ramlan
author_sort Nurradila Ramlan
title Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_short Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_full Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_fullStr Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_full_unstemmed Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_sort improvement of sige hbt design and technology performance using device simulation
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1366
_version_ 1643787267823632384
score 13.18916

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