Comments: Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor

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Bibliographic Details
Main Authors:	Saif, Ala’eddin A., Poopalan, Prabakaran, Prof. Madya
Format:	Article
Language:	English
Published:	Elsevier Ltd. 2011
Subjects:	BST thin films C-V Characteristics Memory window Metal-ferroelectric-insulator-semiconductor (MFIS)
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/13398
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