Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor
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Elsevier Ltd.
2011
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my.unimap-133982011-08-09T06:09:11Z Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor Saif, Ala’eddin A. Poopalan, Prabakaran, Prof. Madya BST thin films C-V Characteristics Memory window Metal-ferroelectric-insulator-semiconductor (MFIS) Link to publisher's homepage at http://www.elsevier.com/ Perovskite ferroelectric BaxSr1-xTiO 3 (x = 0.5, 0.6, 0.7 and 0.8) thin films have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) configurations using a sol-gel technique. The C-V characteristics for different Ba-Sr ratios and different film thicknesses have been measured in order to investigate the ferroelectric memory window effect. The results show that the memory window width increases with the increase both of Ba content and film thickness. This behavior is attributed to the grain size and dipole dynamics effect. It is found also that the memory window increases as the applied voltage increases. In addition, the leakage current density for the films is measured and it is found to be of the order of 10-8 A/cm2 for all tested samples, indicating that the films have good insulating characteristics. 2011-08-07T05:31:43Z 2011-08-07T05:31:43Z 2011-08 Article Solid-State Electronics, vol. 62(1), 2011, pages 25-30 0038-1101 http://www.sciencedirect.com/science/article/pii/S0038110111001110 http://hdl.handle.net/123456789/13398 en Elsevier Ltd. |
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English |
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BST thin films C-V Characteristics Memory window Metal-ferroelectric-insulator-semiconductor (MFIS) |
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BST thin films C-V Characteristics Memory window Metal-ferroelectric-insulator-semiconductor (MFIS) Saif, Ala’eddin A. Poopalan, Prabakaran, Prof. Madya Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor |
| description |
Link to publisher's homepage at http://www.elsevier.com/ |
| format |
Article |
| author |
Saif, Ala’eddin A. Poopalan, Prabakaran, Prof. Madya |
| author_facet |
Saif, Ala’eddin A. Poopalan, Prabakaran, Prof. Madya |
| author_sort |
Saif, Ala’eddin A. |
| title |
Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor |
| title_short |
Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor |
| title_full |
Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor |
| title_fullStr |
Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor |
| title_full_unstemmed |
Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor |
| title_sort |
electrical properties of metal-ferroelectric-insulator-semiconductor structure using baxsr1-xtio3 for ferroelectric-gate field effect transistor |
| publisher |
Elsevier Ltd. |
| publishDate |
2011 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/13398 |
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1643790844339159040 |
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13.201949 |