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Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE

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Main Authors: M.Z. Mohd Yusoff, Azzafeerah Mahyuddin, Z. Hassan, H. Abu Hassan, M.J. Abdullah, UniKL MIAT
Format:
Published: Elsevier 2014
Subjects:
AlN
MBE
XRD
III-Nitride
Silicon
Online Access:http://www.sciencedirect.com/science/article/pii/S0749603613003534
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record_format eprints
spelling my.unikl.ir-73822014-08-05T04:03:35Z Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE M.Z. Mohd Yusoff Azzafeerah Mahyuddin Z. Hassan H. Abu Hassan M.J. Abdullah UniKL MIAT AlN MBE XRD III-Nitride Silicon Full text article available in ScienceDirect The effect of the Al flux on the crystal quality of AlN/GaN/AlN heterostructures grown on Si (1 1 1) substrates by solid source molecular beam epitaxy, using a 13.56 MHz RF nitrogen source, was investigated. The thickness of 69.94 nm is obtained for good growth conditions giving the comparable FWHM of the XRD-rocking curve of 0.46° (27.6 arcmin) when compared with other samples and previous reports. We found that the AlN sample grown under low Al-flux has produced a good structural quality and low compressive strain value compared to the sample grown under high Al-fluxes. 2014-08-05T04:03:35Z 2014-08-05T04:03:35Z 2013-12 Mohd Yusoff, M. Z., Mahyuddin, A., Hassan, Z., Abu Hassan, H., & Abdullah, M. J. (2013). Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (111) substrate by MBE. Superlattices and Microstructures, 64, 367–374. doi:10.1016/j.spmi.2013.10.016 http://www.sciencedirect.com/science/article/pii/S0749603613003534 http://localhost/xmlui/handle/123456789/7382 Superlattices and Microstructures; Elsevier
institution Universiti Kuala Lumpur
building UniKL Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Kuala Lumpur
content_source UniKL Institutional Repository
url_provider http://ir.unikl.edu.my/
topic AlN
MBE
XRD
III-Nitride
Silicon
spellingShingle AlN
MBE
XRD
III-Nitride
Silicon
M.Z. Mohd Yusoff
Azzafeerah Mahyuddin
Z. Hassan
H. Abu Hassan
M.J. Abdullah
UniKL MIAT
Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
description Full text article available in ScienceDirect
format
author M.Z. Mohd Yusoff
Azzafeerah Mahyuddin
Z. Hassan
H. Abu Hassan
M.J. Abdullah
UniKL MIAT
author_facet M.Z. Mohd Yusoff
Azzafeerah Mahyuddin
Z. Hassan
H. Abu Hassan
M.J. Abdullah
UniKL MIAT
author_sort M.Z. Mohd Yusoff
title Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
title_short Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
title_full Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
title_fullStr Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
title_full_unstemmed Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
title_sort influence of al-flux on the growth of aln/gan/aln films on si (1 1 1) substrate by mbe
publisher Elsevier
publishDate 2014
url http://www.sciencedirect.com/science/article/pii/S0749603613003534
http://localhost/xmlui/handle/123456789/7382
_version_ 1644484927168708608
score 13.22586

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