实物特征: Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE

Full text article available in ScienceDirect

Saved in:

书目详细资料
Main Authors:	M.Z. Mohd Yusoff, Azzafeerah Mahyuddin, Z. Hassan, H. Abu Hassan, M.J. Abdullah, UniKL MIAT
格式:
出版:	Elsevier 2014
主题:	AlN MBE XRD III-Nitride Silicon
在线阅读:	http://www.sciencedirect.com/science/article/pii/S0749603613003534 http://localhost/xmlui/handle/123456789/7382
标签:	添加标签没有标签, 成为第一个标记此记录!

实物特征
总结:	Full text article available in ScienceDirect