Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate
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2014
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my.unikl.ir-73812014-08-05T03:46:13Z Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate M.Z. Mohd Yusoff Azzafeerah Mahyuddin Z. Hassan Y. Yusof M.A. Ahmad C.W. Chin H. Abu Hassan M.J. Abdullah (UniKL MIAT) AlN XRD TEM EDS line analysis Full text article available in ScienceDirect.ScienceDirect is accessible through UniKL Library Website The microstructure properties of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS) analysis were used to investigate a reconstruction pattern, cross section, and crystalline quality of the AlN/GaN/AlN heterostructures on Si (1 1 1) susbstrate. The reflection high energy electron diffraction images indicated a good surface morphology of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate. The full width at half maximum (FWHM) obtained from XRD measurement was 0.46° (27.6 arcmin), indicating a good quality layer of sample. From TEM measurements, it is found that the crystalline quality of the AlN/GaN/AlN heterostructures is good comparable with previous report. 2014-08-05T03:45:19Z 2014-08-05T03:45:19Z 2013-08 Mohd Yusoff, M. Z., Mahyuddin, A., Hassan, Z., Yusof, Y., Ahmad, M. A., Chin, C. W., … Abdullah, M. J. (2013). Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate. Superlattices and Microstructures, 60, 500–507. doi:10.1016/j.spmi.2013.05.034 http://www.sciencedirect.com/science/article/pii/S0749603613001730 http://www.academia.edu/4275573/Plasma_assisted_MBEgrowthof_Al_NGa_NAl_Nheterostructures_on_Si111substrate http://localhost/xmlui/handle/123456789/7381 Superlattices and Microstructures; Elsevier |
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AlN XRD TEM EDS line analysis |
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AlN XRD TEM EDS line analysis M.Z. Mohd Yusoff Azzafeerah Mahyuddin Z. Hassan Y. Yusof M.A. Ahmad C.W. Chin H. Abu Hassan M.J. Abdullah (UniKL MIAT) Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate |
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Full text article available in ScienceDirect.ScienceDirect is accessible through UniKL Library Website |
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M.Z. Mohd Yusoff Azzafeerah Mahyuddin Z. Hassan Y. Yusof M.A. Ahmad C.W. Chin H. Abu Hassan M.J. Abdullah (UniKL MIAT) |
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M.Z. Mohd Yusoff Azzafeerah Mahyuddin Z. Hassan Y. Yusof M.A. Ahmad C.W. Chin H. Abu Hassan M.J. Abdullah (UniKL MIAT) |
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M.Z. Mohd Yusoff |
title |
Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate |
title_short |
Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate |
title_full |
Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate |
title_fullStr |
Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate |
title_full_unstemmed |
Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate |
title_sort |
plasma-assisted mbe growth of aln/gan/alnheterostructures on si (111) substrate |
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Elsevier |
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2014 |
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http://www.sciencedirect.com/science/article/pii/S0749603613001730 http://www.academia.edu/4275573/Plasma_assisted_MBEgrowthof_Al_NGa_NAl_Nheterostructures_on_Si111substrate http://localhost/xmlui/handle/123456789/7381 |
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13.214268 |